? 2004 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c45a i c110 t c = 110 c26a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 64 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 140 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s v isol 50/60 hz, rms, t = 1minute leads-to-tab 2500 v weight 6g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c 200 a v ge = 0 v t j = 150 c1ma i ges v ce = 600 v, v ge = 20 v 100 na v ce(sat) i c = i t , v ge = 15 v (see note 1) 2.3 2.7 v ds98651c(06/04) ixgr 32n60c v ce = 600 v i c25 = 45 a v ce(sat) = 2.7 v t fi typ = 55 ns hiperfast tm igbt lightspeed series isoplus247 tm package (electrically isolated back side) preliminary data sheet g = gate, c = collector, e = emitter * patent pending isoplus 247 tm e153432 g c e isolated backside* features z dcb isolated mounting tab z meets to-247ad package outline z high current handling capability z latest generation hdmos tm process z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i t ; v ce = 10 v, 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 190 pf c res 50 pf q g 110 nc q ge i c = i t , v ge = 15 v, v ce = 0.5 v ces 22 nc q gc 40 nc t d(on) 25 ns t ri 20 ns t d(off) 85 170 ns t fi 55 ns e off 0.32 0.75 mj t d(on) 25 ns t ri 25 ns e on 0.30 mj t d(off) 110 ns t fi 105 ns e off 0.85 mj r thjc 0.90 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = i t , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 150 c i c = i t , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixgr 32n60c note 1: i t = 32a isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.50 0.75 1.00 1.25 1.50 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v t j = 25c v ge = 15v t j = 25c i c = 16a i c = 32a i c = 64a t j = 125c f = 1mhz 5v 5v v ge = 15v t j = 25c t j = 125c 7v 9v 5v 7v 9v v ge = 15v 13v c iss c oss c rss 11v 11v fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves ixgr 32n60c
ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. transient thermal resistance ixgr 32n60c pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 255075100125 v ge - volts 0 4 8 12 16 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 e (on) - millijoules 0 1 2 3 4 i c - amperes 0 20406080 e (off) - millijoules 0 1 2 3 4 e (on) - millijoules 0.00 0.25 0.50 0.75 1.00 v ce = 300v i c = 16a i c = 32a e (on) e (off) e (off) t j = 125c r g = 4.7 ? dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 ? t j = 125c 64 e (on) i c = 64a e (off) t j = 125c e (on) i c = 32a e (on) e (off)
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